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1 изолированная эпитаксия кремния
Microelectronics: isolated silicon epitaxyУниверсальный русско-английский словарь > изолированная эпитаксия кремния
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Molecular beam epitaxy — A simple sketch showing the main components and rough layout and concept of the main chamber in a Molecular Beam Epitaxy system Molecular beam epitaxy (MBE) is one of several methods of depositing single crystals. It was invented in the late… … Wikipedia
Molecular-beam epitaxy — (MBE), is one of several methods of depositing single crystals. It was invented in the late 1960s at Bell Telephone Laboratories by J. R. Arthur and Alfred Y. Cho.MethodMolecular beam epitaxy takes place in high vacuum or ultra high vacuum (10−8… … Wikipedia
Semiconductor device fabrication — Semiconductor manufacturing processes 10 µm 1971 3 µm 1975 1.5 µm 1982 … Wikipedia
nanotechnology — /nan euh tek nol euh jee, nay neuh /, n. any technology on the scale of nanometers. [1987] * * * Manipulation of atoms, molecules, and materials to form structures on the scale of nanometres (billionths of a metre). These nanostructures typically … Universalium
Light-emitting diode — LED redirects here. For other uses, see LED (disambiguation). Light emitting diode Red, pure green and blue LEDs of the 5mm diffused type Type Passive, optoelectronic Working principle Electr … Wikipedia
Quantum dot — Part of a series of articles on Nanomaterials Fullerenes … Wikipedia
Quantum cascade laser — Quantum cascade lasers (QCLs) are semiconductor lasers that emit in the mid to far infrared portion of the electromagnetic spectrum and were first demonstrated by Jerome Faist, Federico Capasso, Deborah Sivco, Carlo Sirtori, Albert Hutchinson,… … Wikipedia
Nanotechnology — Part of a series of articles on … Wikipedia
Memristor — Type Passive Working principle Memristance Invented Leon Chua (1971) First production HP Labs (2008) Electronic symbol … Wikipedia
Power MOSFET — A Power MOSFET is a specific type of Metal Oxide Semiconductor Field Effect Transistor (MOSFET) designed to handle large power. Compared to the other power semiconductor devices (IGBT, Thyristor...), its main advantages are high commutation speed … Wikipedia
Michael Francis Tompsett — is a British born physicist and former researcher at English Electric Valve Company, [1] who later moved to Bell Labs in America. He is best known as the inventor of Charge Coupled Device (CCD) Imagers used for imaging in devices such as digital… … Wikipedia